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diode rapidswitchingemittercontrolleddiode IDW40E65D1 emittercontrolleddioderapid1series datasheet industrialpowercontrol
2 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 rapidswitchingemittercontrolleddiode features: ?650vemittercontrolledtechnology ?temperaturestablebehaviourofkeyparameters ?lowforwardvoltage( v f ) ?ultrafastrecovery ?lowreverserecoverycharge( q rr ) ?lowreverserecoverycurrent( i rrm ) ?softnessfactor>1 ?175cjunctionoperatingtemperature ?pb-freeleadplating;rohscompliant applications: ?ac/dcconverters ?boostdiodeinpfcstages ?freewheelingdiodesininvertersandmotordrives ?generalpurposeinverters ?switchmodepowersupplies packagepindefinition: ?pin1-notconnected ?pin2andbackside-cathode ?pin3-anode keyperformanceandpackageparameters type v rrm i f v f , t vj =25c t vjmax marking package IDW40E65D1 650v 40a 1.35v 175c d40e65d1 pg-to247-pin123 a c 1 2 3
3 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 a c 1 2 3
4 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 maximumratings parameter symbol value unit repetitive peak reverse voltage v rrm 650 v diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 80.0 40.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 120.0 a diode surge non repetitive forward current t c =25c, t p =10.0ms,sinehalfwave i fsm 320.0 a powerdissipation t c =25c p tot 179.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic diode thermal resistance, 1) junction - case r th(j-c) 0.84 k/w thermal resistance junction - ambient r th(j-a) 40 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic diode forward voltage v f i f =40.0a t vj =25c t vj =125c t vj =175c - - - 1.35 1.32 1.28 1.70 - - v reverse leakage current i r v r =650v t vj =25c t vj =175c - - - - 40.0 4000.0 a electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh 1) please be aware that in non standard load conditions, due to high rth(j-c), tvj close to tvjmax can be reached. a c 1 2 3
5 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 77 - ns diode reverse recovery charge q rr - 0.87 - c diode peak reverse recovery current i rrm - 17.5 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1520 - a/s t vj =25c, v r =400v, i f =40.0a, di f /dt =1000a/s diode reverse recovery time t rr - 129 - ns diode reverse recovery charge q rr - 0.49 - c diode peak reverse recovery current i rrm - 6.9 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -300 - a/s t vj =25c, v r =400v, i f =40.0a, di f /dt =200a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit diodecharacteristic,at t vj =175c/125c diode reverse recovery time t rr - 110 - ns diode reverse recovery charge q rr - 2.36 - c diode peak reverse recovery current i rrm - 27.3 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1320 - a/s t vj =175c, v r =400v, i f =40.0a, di f /dt =1000a/s diode reverse recovery time t rr - 163 - ns diode reverse recovery charge q rr - 1.04 - c diode peak reverse recovery current i rrm - 10.4 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -600 - a/s t vj =125c, v r =400v, i f =40.0a, di f /dt =200a/s a c 1 2 3
6 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 figure 2. diodeforwardcurrentasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] i f ,forwardcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 figure 3. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.015899 1.9e-5 2 0.19942 2.4e-4 3 0.23881 1.9e-3 4 0.34593 0.01162857 5 0.036218 0.0912415 6 2.8e-3 1.815212 figure 4. typicalreverserecoverytimeasafunctionof diodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 200 600 1000 1400 1800 2200 2600 3000 0 20 40 60 80 100 120 140 160 180 200 t j =25c, i f = 40a t j =125c, i f = 40a t j =175c, i f = 40a a c 1 2 3
7 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 figure 5. typicalreverserecoverychargeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 200 600 1000 1400 1800 2200 2600 3000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j =25c, i f = 40a t j =125c, i f = 40a t j =175c, i f = 40a figure 6. typicalpeakreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rrm ,reverserecoverycurrent[a] 200 600 1000 1400 1800 2200 2600 3000 0 5 10 15 20 25 30 35 40 45 t j =25c, i f = 40a t j =125c, i f = 40a t j =175c, i f = 40a figure 7. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 200 600 1000 1400 1800 2200 2600 3000 -2500 -2250 -2000 -1750 -1500 -1250 -1000 -750 -500 -250 0 t j =25c, i f = 40a t j =125c, i f = 40a t j =175c, i f = 40a figure 8. typicaldiodeforwardcurrentasafunctionof forwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 20 30 40 50 60 70 80 t j =25c t j =175c a c 1 2 3
8 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 figure 9. typicaldiodeforwardvoltageasafunctionof junctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 i f =10a i f =20a i f =40a i f =60a i f =80a a c 1 2 3
9 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 a c 1 2 3 pg-to247-3
10 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 a c 1 2 3 pg-to247-3 t a a b b
11 IDW40E65D1 emittercontrolleddioderapid1series rev.1.1,2013-03-13 revisionhistory IDW40E65D1 revision:2013-03-13,rev.1.1 previous revision revision date subjects (major changes since last revision) 1.1 2013-03-13 preliminary data sheet welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com publishedby infineontechnologiesag 81726munich,germany 81726mnchen,germany ?2013infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestinfineon technologiesoffice(www.infineon.com). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesin question,pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineon technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. a c 1 2 3 pg-to247-3 t a a b b

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